Genesis and Identification of Low Resistivity of Chang 2 Oil Layer in Heshui Area, Ordos Basin

doi:10.7657/XJPG20200301

Abstract

Abstract:

In order to determine the genesis of low resistivity of Chang 2 oil layer in Heshui area of Ordos basin, the paper analyzes the data of scanning electron microscope, casting thin section, mercury injection experiment, grain size, porosity and water quality. The results show that the low resistivity of the oil layer is attributed to high salinity of formation water, complex pore structure and high content of irreducible water. The high salinity of formation water is mainly caused by atmospheric precipitation which brings the ions from weathering and denudation of the overlying strata into the formation; CO₂ carried by atmospheric precipitation reacts with feldspar in the formation and then kaolinite forms. The kaolinite with unsaturated electrical properties can adsorb cation and the cation exchange quantity increases, causing the enhancement of kaolinite additional conductivity. The metal ions such as K ⁺ and Al ³⁺ in medium are absorbed by smectite, which results in the rearrangement of the crystal and the substitution of isomorphism, leading to the low resistivity of the reservoir. In view of the characteristics of the oil layer in the study area, the paper proposes that a crossplot of resistivity and thickness can be used to identify low-resistivity oil layers, and to determine the upper and lower limits of each factor in the low-resistance oil layer, and establishes a chart to identify low-resistance oil layers for Chang 2 member with the coincidence rate between the identification result and the oil test result being more than 80%.

Key words: Ordos basin, Heshui area, Yanchang formation, low resistivity oil layer, logging response characteristic, pore structure, salinity

CLC Number:

TE122.111

PAN Yiwen, ZUO Xiaohuan, ZHANG Shitao, ZHANG Yaohua. Genesis and Identification of Low Resistivity of Chang 2 Oil Layer in Heshui Area, Ordos Basin[J]. Xinjiang Petroleum Geology, 2020, 41(3): 253-260.

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